Simulation Study And Analysis Of Zno/sio2/si Sis Heterojunction Solar Cell

In this paper simulation study with the design evaluation of n-ZnO/SiO2/p-Si and n-ZnO/SiO2/n-Si heterojunction solar cells using two dimensional numerical computer aided design tool (TCAD). A program in ATLAS simulator from SILVACO international has been developed. The device performance is evaluated by implementing special models (i.e., surface recombinations, thermionic field emission tunneling model for carrier transport at the heterojunction etc) at the semiconductor-semiconductor interfaces. A current density of 22,15 mA/cm2, open circuit voltage of 0,46 V and fill factor of 31% was achieved for n-ZnO/SiO2/p-Si heterojunction. Contrary to n-ZnO/SiO2/p-Si structure, n-ZnO/SiO2/n-Si SIS heterojunction shows poor photovoltaic response and low Voc because higher barrier height for the ZnO/SiO2/n-Si. Simulation results give dark current of the order of 10-11 A for both types of structures.