I-v Characteristics Model For Algan/gan Hemts Using Tcad-silvaco

We report some results the drain current characteristics of AlGaN/GaN HEMT(High Electron Mobility Transistor). on are simulated by changing the different device parameters such as Al content x and the barrier thickness for different values ​​of the gate voltage using Tcad-Silvaco numerical simulation software. Drift–diffusion model has taken for simulating the proposed device. we use SiC as a substrate for this structure, The channel is made ​​of GaN and source-drain spacing is 1 µm.